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www.irf.com 1 09/19/12 IRFH5025PBF hexfet power mosfet notes through are on page 8 features and benefits features benefits applications ? secondary side synchronous rectification ? inverters for dc motors ? dc-dc brick applications ? boost converters pqfn 5x6 mm note form quantity irfh5025trpbf pqfn 5mm x 6mm tape and reel 4000 irfh5025tr2pbf pqfn 5mm x 6mm tape and reel 400 orderable part number package type standard pack v ds 250 v r ds(on) max (@v gs = 10v) 100 m q g (typical) 37 nc r g (typical) 1.6 i d (@t c(bottom) = 25c) 25 a low r dson lower conduction losses low thermal resistance to pcb ( 0. 100 0. ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, industrial qualification increased reliability absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v i d @ t c(top) = 25c continuous drain current, v gs @ 10v i d @ t c(top) = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @ t c(top) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range w a c 3.1 25 16 5.7 3.7 v -55 to + 150 3.6 0.07 8.3 max. 3.8 46 20 250

2 www.irf.com s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 250 ??? ??? v ? . 0.1 100 v gs(th) gate threshold voltage 3.0 ??? 5.0 v 1 0 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 13 ??? ??? s q g total gate charge ??? 37 56 q gs1 pre-vth gate-to-source charge ??? 8.3 ??? q gs2 post-vth gate-to-source charge ??? 1.9 ??? q gd gate-to-drain charge ??? 13 ??? q godr gate charge overdrive ??? 14 ??? see fig.17 & 18 q sw switch charge (q gs2 + q gd ) ??? 15 ??? q oss output charge ??? 11 ??? nc r g gate resistance ??? 1.6 ??? t d(on) turn-on delay time ??? 9.0 ??? t r rise time ??? 6.3 ??? t d(off) turn-off delay time ??? 17 ??? t f fall time ??? 6.1 ??? c iss input capacitance ??? 2150 ??? c oss output capacitance ??? 150 ??? c rss reverse transfer capacitance ??? 40 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 55 83 ns q rr reverse recovery charge ??? 510 770 nc t on forward turn-on time time is dominated by parasitic inductance v ds = v gs , i d = 150 a a 5.7 ??? ??? 46 ??? ??? na ns ??? typ. ??? r g =1.8 pf conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 5.7a conditions see fig.15 max. 320 5.7 ? = 1.0mhz di/dt = 500a/ s t j = 25c, i s = 5.7a, v gs = 0v showing the integral reverse p-n junction diode. v ds = 250v, v gs = 0v nc v gs = 10v t j = 25c, i f = 5.7a, v dd = 125v mosfet symbol v ds = 16v, v gs = 0v v dd = 125v, v gs = 10v i d = 5.7a v gs = 0v v ds = 50v v ds = 50v, i d = 5.7a v ds = 250v, v gs = 0v, t j = 125c i d = 5.7a v gs = 20v v gs = -20v v ds = 125v thermal resistance parameter typ. max. units r 0. 0. ??? 15 c/w r ??? 35 r 10 ??? 22

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.0001 0.001 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c 4.5v vgs top 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.8v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c 4.5v vgs top 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.8v bottom 4.5v 3.0 4.0 5.0 6.0 7.0 8.0 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 50v 60 s pulse width t j = 25c t j = 150c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 5.7a v gs = 10v 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 1020304050 q g total gate charge (nc) 0 4 8 12 16 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 200v v ds = 125v v ds = 50v i d = 5.7a

4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case (top) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (top) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.2 0.4 0.6 0.8 1.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t a , ambient temperature (c) 0 2 4 6 i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 2.0 3.0 4.0 5.0 6.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a i d = 1.0ma i d = 500 a i d = 150 a 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec

www.irf.com 5 fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage 4 8 12 16 20 v gs , gate-to-source voltage (v) 40 80 120 160 200 240 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) t j = 25c t j = 125c i d = 5.7a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 1400 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.8a 1.2a bottom 5.7a fig 14. typical avalanche current vs. pulsewidth 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.01 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming tj = 125c and tstart =25c (single pulse)

6 www.irf.com fig 15. for n-channel hexfet power mosfets fig 18a. gate charge test circuit fig 18b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr

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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
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www.irf.com 7 pqfn 5x6 outline "b" package details note: for the most current drawing please refer to ir website at: http://www .irf.com/package/ pqfn 5x6 outline "b" part marking xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) for footprint and stencil design recommendations, please refer to application note an-1154 at http://www .irf.com/technical-info/appnotes/an-1 154.pdf

8 www.irf.com pqfn tape and reel qualification standards can be found at international rectifier?s web site http://www .irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www .irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 19.6mh, r g = 25 , i as = 5.7a. pulse width 400 s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. ir world headquarters: 101n.sepulveda blvd, el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/2012 data and specifications subject to change without notice. ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level industrial ?? (per je dec jes d47f ??? guidelines ) note: for the most current drawing please refer to ir website at: http://www .irf.com/package/

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